MOSFET MOSFET
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 25 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 75 A | ||
| Resistance Drain-Source RDS (on) : | 0.009 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
| Package / Case : | IPAK | Packaging : | Tube |
| Technical/Catalog Information | PHU78NQ03LT,127 |
| Vendor | NXP Semiconductors |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25° C | 75A |
| Rds On (Max) @ Id, Vgs | 9 mOhm @ 25A, 10V |
| Input Capacitance (Ciss) @ Vds | 970pF @ 12V |
| Power - Max | 107W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 11nC @ 4.5V |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| FET Feature | Logic Level Gate |
| Drawing Number | 568; SOT533; ; |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | PHU78NQ03LT,127 PHU78NQ03LT,127 |