PK90HB-120

Power Thyristor/Diode Module PK90HB series are desinged for various rectifier circuits and power controls. For your circuit applications, following internal connections and wide voltage ratings up to 1,600 V are available and electrically isolated mounting base make your mechanical design easy.It has five applications. The first one is various rectifiers. The second one is AC/DC motor drives. The third one is heater controls. The forth one is light dimmers. The last one is static switches.

There are some maximum ratings about it.Repetitive peak reverse voltage(V_RRM) is 1200 V. Non-repetitive peak reverse  voltage(V_RSM) is 1350 V. Repetitive peak off-state voltage(V_DRM) is 1200 V.Average on-state current(I_T(AV) ) is 90 A(single phase, half wave,180°conduction , Tc is 88°C). R.M.S. on-state current(I_T(RMS) ) is 140 A(single phase, half wave,180°conduction , Tc is 88°C).Surge on-state current(ITSM) is 1650 A or 1800 A (1/2 cycle,50/60Hz, peak value, non-repetitive).I²t is 15000 A²S(value for one cycle of surge current). Peak gate power dissipation(P_GM) is 10 W. Average gate power dissipation(P_G(AV) )is 3 W. Peak gate current(I_FGM ) is 3 A. Peak gate voltage(forward)(VFGM) is 10 V. Peak gate voltage(reverse)(VRGM) is 5 V. Critical rate of rise of on-state current(di/dt) is 200 A/s(I_G is 100mA,Tj is 25, VD is 1/2VDRM,dIG/dt is 0.1A/s.Isolation breakdwown voltage(R.M.S)(Viso) is 2500 V(A.C 1 minute).Operating junction temperature(Tj) is -40 to +125.Storage temperature(Tstg) is -40 to +125.Otherwise, there are also some electrical characteristics about it.Repetitive peak off-state current.max(I_DRM) is 15 mA (at VDRM,single phase,half wave,Tj is 125).Repetitive peak reverse current,max(I_RRM) is 15 mA(at VDRM,single phase,half wave, Tj is 125). Peak on-state voltage,max(I_GT/V_GT) is 1.40 V(on-state current 270 A,Th is 125inst,measurement).Gate trigger current/voltage,max(I_GT/V_GT) is 100/2 mA/V(Tj is 25, IT is 1 A and VD is 6 V).Non-trigger gate, voltage, min(V_GD) is 0.25 V(Tj is 125, VD is 1/2 VDRM).Turn on time, max(tgt) is 10 us (IT is 90 A,I_G is 100mA,Tj is 25, VD is 1/2 V_DRM,diG/dt is 0.1 A/us).Thermal impedance, max(Rth(j-c) is 0.30/W(junction to case).

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