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PM100CLB060
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DataSheet
General Description
PM100CLB060 Maximum Ratings
| Symbol | Parameter | Condition | Ratings | Unit |
| VCES | Collector-Emitter Voltage | VD = 15V, VCIN = 15V | 600 | V |
| ±IC | Collector Current | TC = 25°C | 100 | A |
| ±ICP | Collector Current (Peak) | TC = 25°C | 200 | A |
| PC | Collector Dissipation | TC = 25°C (Note-1) | 356 | W |
| Tj | Junction Temperature | 20 ~ +150 |
PM100CLB060 Features
a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process.For example, typical Vce(sat)=1.5V @Tj=125°C
b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each con-servation upper and lower arm of IPM.
c) New small package
Reduce the package size by 32%, thickness by 22% from S-DASH series.
•3 100A, 600V Current-sense IGBT type inverter
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, short-circuit, over-temperature & under-voltage (P-Fo available from upper arm devices)
• Acoustic noise-less 11kW class inverter application
PM100CLB060 Typical Application
General purpose inverter, servo drives and other motor controls
PM100CLB060
PDF/DataSheet Download
- Datasheet: PM100CLB060
- File Size: 110939 KB
- Manufacturer: Mitsubishi Electric Semiconductor
- Click here to Download
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