PM100CSE120

Features: a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1m fine rule process.b) Using new Diode which is designed to get soft reverse recovery characteristics.• 3 100A, 1200V Current-sense IGBT for 15kHz switching• Monolithic gate drive & protect...

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SeekIC No. : 004463517 Detail

PM100CSE120: Features: a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1m fine rule process.b) Using new Diode which is designed to get soft reverse recovery characteristics....

floor Price/Ceiling Price

Part Number:
PM100CSE120
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/10

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Product Details

Description



Features:

a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1m fine rule process.
b) Using new Diode which is designed to get soft reverse recovery characteristics.
• 3 100A, 1200V Current-sense IGBT for 15kHz switching
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature &
under-voltage
• Acoustic noise-less 18.5/22kW class inverter application





Application

General purpose inverter, servo drives and other motor controls




Specifications

Symbol
Parameter
Condition
Ratings
Unit
VCES Collector-Emitter Voltage
VD = 15V, VCIN = 15V
1200
V
±IC Collector Current
TC = 25°C
100
V
±ICP Collector Current (Peak)
TC = 25°C
200
V
PC Collector Dissipation
TC = 25°C
595
W
Tj Junction Temperature
20 ~ +150
°C





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