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MFG:module  Package Cooled:MIT  D/C:05+  

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Part Number: PM150RSE120

 

MFG: module

Package Cooled: MIT

D/C: 05+

 

Urgent Purchase

PM150RSE120 Maximum Ratings

Symbol Parameter Condition Ratings Unit
VCES Collector-Emitter Voltage VD = 15V, VCIN = 15V 1200 V
±IC Collector Current TC = 25°C 150 A
±ICP Collector Current (Peak) TC = 25°C 300 A
PC Collector Dissipation TC = 25°C 781 W
Tj Junction Temperature   20 ~ +150 °C

PM150RSE120 Features

• Adopting new 4th generation planar IGBT chip, which performance is improved by 1m fine rule process.
• Using new Diode which is designed to get soft reverse recovery characteristics.
• 3 150A, 1200V Current-sense IGBT for 15kHz switching
• 50A, 1200V Current-sense regenerative brake IGBT
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage
• Acoustic noise-less 30kW class inverter application

PM150RSE120 Typical Application

• General purpose inverter, servo drives and other motor controls

PM150RSE120 datasheet

PM150RSE120
PDF/DataSheet Download

  • Datasheet: PM150RSE120
  • File Size: 125854 KB
  • Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
  • Click here to Download

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