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Part Number: PM200RSE060

 

MFG: N/A

Package Cooled: NA/

D/C: 09+

 

Urgent Purchase

PM200RSE060 Maximum Ratings

Symbol Parameter Conditions Ratings Unit
VCES Collector-emitter voltage VD = 15V, ICIN = 10mA 600 V
IC Collector current TC = 25°C 75 A
ICP Collector current (peak) T = 25°C 150 A
PC Collector dissipation T = 25°C 312 W
VR(DC) FWDi Rated DC Reverse Voltage T = 25°C 600 V
IF FWDi Forward Current TC = 25°C 75 A
Tj Junction temperature   20 ~ +150 °C

PM200RSE060 Features

• Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. For example, typical VCE(sat)=1.7V
• Using new Diode which is designed to get soft reverse recovery characteristics.
• 3 200A, 600V Current-sense IGBT for 15kHz switching
• 75A, 600V Current-sense regenerative brake IGBT
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage
• Acoustic noise-less 22kW class inverter application

PM200RSE060 Typical Application

·General purpose inverter, servo drives and other motor controls

PM200RSE060 datasheet

PM200RSE060
PDF/DataSheet Download

  • Datasheet: PM200RSE060
  • File Size: 130278 KB
  • Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
  • Click here to Download

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