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MFG:module  Package Cooled:MIT  D/C:05+  

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Part Number: PM300RSE060

 

MFG: module

Package Cooled: MIT

D/C: 05+

 

Urgent Purchase

PM300RSE060 Maximum Ratings

Symbol Parameter Conditions Ratings Unit
VCES Collector-emitter voltage VD = 15V, ICIN = 10mA 600 V
±IC Collector current TC = 25°C 300 A
±ICP Collector current (peak) TC = 25°C 600 A
PC Collector dissipation TC = 25°C 781 W
Tj Junction temperature   20 ~ +150 °C

PM300RSE060 Features

• Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. For example, typical VCE(sat)=1.7V
•  Using new Diode which is designed to get soft reverse recovery characteristics.
• 3 300A, 600V Current-sense IGBT for 15kHz switching
• 100A, 600V Current-sense regenerative brake IGBT
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage
• Acoustic noise-less 30kW class inverter application

 

PM300RSE060 Typical Application

General purpose inverter, servo drives and other motor controls

PM300RSE060 datasheet

PM300RSE060
PDF/DataSheet Download

  • Datasheet: PM300RSE060
  • File Size: 130190 KB
  • Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
  • Click here to Download

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