PM50302F

Features: · Equipped with Power MOS FET· Low on-resistance· High speed switching· Low drive current· Wide area of safe operation· Inherent parallel diode between source and drain· Isolated base from Terminal· Suitable for motor driver, switching regulator and etc.Application· High Speed Power Swit...

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PM50302F Picture
SeekIC No. : 004463635 Detail

PM50302F: Features: · Equipped with Power MOS FET· Low on-resistance· High speed switching· Low drive current· Wide area of safe operation· Inherent parallel diode between source and drain· Isolated base from...

floor Price/Ceiling Price

Part Number:
PM50302F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/4/27

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Product Details

Description



Features:

· Equipped with Power MOS FET
· Low on-resistance
· High speed switching
· Low drive current
· Wide area of safe operation
· Inherent parallel diode between source and drain
· Isolated base from Terminal
· Suitable for motor driver, switching regulator and etc.




Application

· High Speed Power Switching




Specifications

Item
Symbol
Rating
Unit
Drain source voltage
V(BR)DSS
500
V
Gate source voltage
V(BR)GSS
±30
V
Drain current
ID
75
A
Drain peak current
ID(peak)
180
A
Body to drain diode reverse drain current
IDR
75
A
Body to drain diode reverse peak current
IDR(peak)
180
A
Channel dissipation
Pch*1
300
W
Channel temperature
Tch
150
Storage temperature
Tstg
45 to +125
Insulation dielectric
Visol*2
2000
V

Notes:
1. Value at Tc = 25
2. Base to terminals AC minute




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