PMBT6428

The PMBT6428 is designed as one kind of NPN general purpose transistor device that has some points of features (1)Low current (max. 100 mA); (2)Low voltage (max. 50 V). And this device can be used in (1)general purpose switching and amplification; (2)telephony and professional communication equipment applications. PMBT6428 is also available in a SOT23 plastic package.

The absolute maximum ratings of the PMBT6428 can be summarized as:(1)collector-base voltage: 60 V;(2)collector-emitter voltage: 50 V;(3)emitter-base voltage: 6 V;(4)collector current (DC): 100 mA;(5)peak collector current: 200 mA;(6)peak base current: 200 mA;(7)total power dissipation: 250 mW;(8)storage temperature: -65 to +150 °C;(9)junction temperature: 150 °C;(10)operating ambient temperature: -65 to +150 °C.

The electrical characteristics of this device can be summarized as:(1)collector cut-off current: 10 nA;(2)emitter cut-off current: 10 nA;(3)collector-emitter saturation voltage: 200 mV or 600 mV;(4)base-emitter voltage: 560 to 660 mV;(5)collector capacitance: 3 pF;(6)emitter capacitance: 12 pF;(7)transition frequency: 100 to 700 MHz. If you want to know more information such as the electrical characteristics about the PMBT6428, please download the datasheet in www.seekic.com or www.chinaicmart.com.