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PMGD780SN,115

MOSFET N-CH TRENCH DL 60V

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SeekIC No. : 00148771 Detail

PMGD780SN,115: MOSFET N-CH TRENCH DL 60V

PMGD780SN,115 Data Sheet

floor Price/Ceiling Price

US $ .06~.08 / Piece | Get Latest Price
Part Number:
PMGD780SN,115
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.08
  • $.07
  • $.07
  • $.06
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.49 A
Resistance Drain-Source RDS (on) : 920 mOhms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-363 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Drain-Source Breakdown Voltage : 60 V
Package / Case : SOT-363
Resistance Drain-Source RDS (on) : 920 mOhms
Continuous Drain Current : 0.49 A


Parameters:

Technical/Catalog InformationPMGD780SN,115
VendorNXP Semiconductors (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C490mA
Rds On (Max) @ Id, Vgs920 mOhm @ 300mA, 10V
Input Capacitance (Ciss) @ Vds 23pF @ 30V
Power - Max410mW
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs1.05nC @ 10V
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
FET FeatureLogic Level Gate
Drawing Number568; SOT363; GV, GW; 6
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names PMGD780SN,115
PMGD780SN,115
568 2369 6 ND
56823696ND
568-2369-6



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