MOSFET UTRENCHMOS (TM) FET
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
| Gate-Source Breakdown Voltage : | +/- 8 V | Continuous Drain Current : | 6.3 A | ||
| Resistance Drain-Source RDS (on) : | 28 mOhms at 4.5 V | Configuration : | Single Quad Drain | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | SOT-457 | Packaging : | Reel |
| Technical/Catalog Information | PMN23UN,135 |
| Vendor | NXP Semiconductors |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 6.3A |
| Rds On (Max) @ Id, Vgs | 28 mOhm @ 2A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 740pF @ 10V |
| Power - Max | 1.75W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 10.6nC @ 4.5V |
| Package / Case | 6-TSOP |
| FET Feature | Logic Level Gate |
| Drawing Number | 568; SOT457; ; 6 |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | PMN23UN,135 PMN23UN,135 |