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PMN40LN

Features: · TrenchMOS™ technology· Logic level compatible· Surface mount package.Application· Battery management· High speed switch· Low power DC to DC converterPinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 Tj 150 30 V ...

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SeekIC No. : 004464197 Detail

PMN40LN: Features: · TrenchMOS™ technology· Logic level compatible· Surface mount package.Application· Battery management· High speed switch· Low power DC to DC converterPinoutSpecifications Symbo...

PMN40LN Data Sheet

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Part Number:
PMN40LN
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· TrenchMOS™ technology
· Logic level compatible
· Surface mount package.


Application

· Battery management
· High speed switch
· Low power DC to DC converter


Pinout

Connection Diagram


Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) 25 Tj 150   30 V
VDGR drain-gate voltage 25 Tj 150 ; RGS = 20 k   30 V
VGS gate-source voltage     ±15 V
ID drain current (DC) Tsp = 25 ; VGS = 10 V; Figure 2 and 3   5.4 A
Tsp =70 ; VGS = 10 V; Figure 2   4 A
IDM peak drain current Tsp = 25 ; pulsed; tp 10 ms; Figure 3   21.6 A
Ptot total power dissipation Tsp = 25 ; Figure 1   1.75 W
Tstg storage temperature   -55 +150
Tj junction temperature   -55 +150
Source-drain diode
IS source (diode forward) current (DC) Tsp = 25   1.45 A
ISM peak source (diode forward) current Tsp = 25 ; pulsed; tp 10s   5.8 A



Description

N-channel logic level field-effect power transistor PMN40LN in a plastic package using TrenchMOS™ technology. Product availability: PMN40LN in SOT457 (TSOP6).


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