PN2369

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Package / Case : TO-92
Maximum DC Collector Current : 0.2 A
Packaging : Bulk
DC Collector/Base Gain hfe Min : 40
Collector- Emitter Voltage VCEO Max : 15 V
Emitter- Base Voltage VEBO : 4.5 V


Features:

· Low current (max. 200 mA)
· Low voltage (max. 15 V).


Application

·High-speed switching applications.


Pinout




Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCBO	collector-base voltage	open emitter	-	40	V
VCEO	collector-emitter voltage	open base	-	15	V
VEBO	emitter-base voltage	open collector	-	5	V
IC	collector current (DC)		-	200	mA
ICM	peak collector current		-	300	mA
IBM	peak base current		-	100	mA
Ptot	total power dissipation	Tamb  25 °C	-	500	mW
Tstg	storage temperature		-55	+150	°C
Tj	junction temperature		-	150	°C
Tamb	operating ambient temperature		-55	+150	°C

Description

PN2369 NPN switching transistor in a TO-92; SOT54 plastic package.


Parameters:

Technical/Catalog Information	PN2369
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	15V
Current - Collector (Ic) (Max)	200mA
Power - Max	350mW
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic	250mV @ 1mA, 10mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Bulk
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	PN2369 PN2369