PN2907A

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Frequency : 200 MHz
Package / Case : TO-92
Packaging : Box
Maximum DC Collector Current : 0.6 A
DC Collector/Base Gain hfe Min : 75 at 100 uA at 10 V


Specifications

Symbol	Parameter	Value	Units
VCEO	Collector-Emitter Voltage	60	V
VCBO	Collector-Base Voltage	60	V
VEBO	Emitter-Base Vol tage	5.0	V
IC	Collector Current - Continuous	800	mA
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES:
` These ratings are based on a maximum junction temperature of 150 degrees C.
` These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle perations.
` All voltages (V) and currents (A) are negative polarity for PNP transistors.

Parameters:

Technical/Catalog Information	PN2907A
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	600mA
Power - Max	500mW
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V
Vce Saturation (Max) @ Ib, Ic	400mV @ 15mA, 150mA
Frequency - Transition	200MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92-3 (Straight Leads)
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PN2907A PN2907A 497 2403 ND 4972403ND 497-2403