PN3565

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Packaging : Reel
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Package / Case : TO-92
Collector- Emitter Voltage VCEO Max : 25 V
Maximum DC Collector Current : 0.05 A
Maximum Operating Frequency : 240 MHz
DC Collector/Base Gain hfe Min : 70 at 100 uA at 10 V


Specifications

TA = 25°C unless otherwise noted

Symbol	Parameter	Value	Units
VCEO	Collector-Emitter Voltage	25	V
VCBO	Collector-Base Voltage	30	V
VEBO	Emitter-Base Voltage	6.0	V
IC	Collector Current - Continuous	500	mA
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150	°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Description

This device PN3565 is designed for use as general purpose amplifiersand switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics.

Parameters:

Technical/Catalog Information	PN3565
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	25V
Current - Collector (Ic) (Max)	500mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	150 @ 1mA, 10V
Vce Saturation (Max) @ Ib, Ic	350mV @ 100A, 1mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PN3565 PN3565