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PNP2N6609

Features: • Pb−Free Packages are Available**• High Safe Operating Area (100% Tested) 150 W @ 100 V• Completely Characterized for Linear Operation• High DC Current Gain and Low Saturation Voltage hFE = 15 (Min) @ 8.0 A, 4.0 V VCE(sat) = 1.4 V (Max) @ IC = 8.0 A, IB = 0...

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PNP2N6609: Features: • Pb−Free Packages are Available**• High Safe Operating Area (100% Tested) 150 W @ 100 V• Completely Characterized for Linear Operation• High DC Current Gain ...

PNP2N6609 Data Sheet

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Part Number:
PNP2N6609
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/30

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Product Details

Description



Features:

• Pb−Free Packages are Available**
• High Safe Operating Area (100% Tested) 150 W @ 100 V
• Completely Characterized for Linear Operation
• High DC Current Gain and Low Saturation Voltage
       hFE = 15 (Min) @ 8.0 A, 4.0 V
       VCE(sat) = 1.4 V (Max) @ IC = 8.0 A, IB = 0.8 A
• For Low Distortion Complementary Designs


Specifications

Rating

Symbol

Value

Unit

Collector − Emitter Voltage

VCEO

140

Vdc

Collector − Emitter Voltage

VCEX

160

Vdc

Collector − Base Voltage

VCBO

160

Vdc

Emitter − Base Voltage

VEBO

7

Vdc

Collector Current
− Continuous
− Peak (Note 2)

IC

16
30

Adc

Base Current
− Continuous
− Peak (Note 2)

IB

4
15

Adc

Total Power Dissipation @ TA = 25°C
Derate above 25°C

PD

150
0.855

W
W/°C

Operating and Storage Junction
Temperature Range

TJ, Tstg

−65 to +200

°C




Description

The 2N3773 and 2N6609 are PowerBase™ power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, DC−DC converters or inverters.




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