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Part Number: PPC5001T

 

 

 

 

Description: NPN silicon planar epitaxial microwave power transistor in a SOT447A metal ceramic flange package.


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PPC5001T General Description


NPN silicon planar epitaxial microwave power transistor in a SOT447A metal ceramic flange package.

PPC5001T Maximum Ratings

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage open emitter - 40 V
VCER collector-emitter voltage RBE = 70 - 35 V
VCEO collector-emitter voltage open emitter - 16 V
VEBO emitter-base voltage open collector - 3 V
IC collector current (DC)   - 0.25 A
Ptot total power dissipation Tamb  75 °C - 4 W
Tstg storage temperature   -65 +200 °C
Tj junction temperature   - 200 °C
Tsld soldering temperature t 10 s; note 1 - 235 °C

PPC5001T Features

· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
· Interdigitated structure provides high emitter efficiency
· Gold metallization realizes very stable characteristics and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance

PPC5001T Typical Application

Intended for use in common-collector oscillator circuits in military and professional applications up to 5 GHz.

PPC5001T Connection Diagram

PPC5001T Connection Diagram

PPC5001T datasheet

PPC5001T
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