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PPC5001T

Features: · Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Interdigitated structure provides high emitter efficiency· Gold metallization realizes very stable characteristics and excellent lifetime· Multicell geometry gives good balance of di...

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SeekIC No. : 004464486 Detail

PPC5001T: Features: · Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Interdigitated structure provides high emitter efficiency· Gold metallization real...

PPC5001T Data Sheet

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Part Number:
PPC5001T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/28

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Product Details

Description



Features:

· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
· Interdigitated structure provides high emitter efficiency
· Gold metallization realizes very stable characteristics and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance


Application

Intended for use in common-collector oscillator circuits in military and professional applications up to 5 GHz.


Pinout

Connection Diagram


Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage open emitter - 40 V
VCER collector-emitter voltage RBE = 70 - 35 V
VCEO collector-emitter voltage open emitter - 16 V
VEBO emitter-base voltage open collector - 3 V
IC collector current (DC)   - 0.25 A
Ptot total power dissipation Tamb  75 °C - 4 W
Tstg storage temperature   -65 +200 °C
Tj junction temperature   - 200 °C
Tsld soldering temperature t 10 s; note 1 - 235 °C



Description

PPC5001T NPN silicon planar epitaxial microwave power transistor in a SOT447A metal ceramic flange package.


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