PS2701A-1-F3

The PS2701A-1-F3 is designed as an optically coupled isolator containing a GaAs light emitting diode and a NPN silicon phototransistor. This device is mounted in a plastic SOP (small outline package) for high density applications and has a shield effect to cut-off ambient light.

PS2701A-1-F3 has three features. (1)High isolation voltage which would be 3.75kVrms. (2)SOP (small out-line package). (3)High speed switching which means tr=5us typ and tf=7us typ. Those are all the main features.

Some PS2701A-1-F3 absolute maximum ratings have been concluded into several points as follow. (1)Its forward current DC would be 30mA. (2)Its reverse voltage would be 6V. (3)Its power dissipation derating would be 0.8°C. (4)Its power dissipation would be 80mW. (5)Its peak forward current would be 0.5A. (6)Its collector to emitter voltage would be 70V. (7)Its emitter to collector voltage would be 5V. (8)Its collector current would be 30mA. (9)Its transistor power dissipation derating would be 1.5mW/°C. (10)Its transistor power dissipation would be 150mW. (11)isolation voltage would be 3750Vrms. (12)Its storage temperature range would be from -55°C to 150°C. (13)Its operating ambient would be from -55°C to 100°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some PS2701A-1-F3 electrical characteristics are concluded as follow. (1)Its diode forward voltage at If=5mA would be typ 1.2V and max 1.4V. (2)Its reverse current would be max 5uA. (3)Its terminal capacitance would be typ 10pF. (4)Its collector to emitter current would be max 100nA. (5)Its current transfer ratio would be min 50% and max 300%. (6)Its collector saturation voltage would be typ 0.13V and max 0.3V. (7)Its isolation resistance would be min 10^11ohms. (8)Its isolation capacitance would be typ 0.4pF. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!