PSMN010-55D,118

MOSFET TAPE13 PWR-MOS

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PSMN010-55D,118 Picture
SeekIC No. : 00161005 Detail

PSMN010-55D,118: MOSFET TAPE13 PWR-MOS

floor Price/Ceiling Price

Part Number:
PSMN010-55D,118
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/5

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 15 V Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.0105 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : SOT-428 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Gate-Source Breakdown Voltage : +/- 15 V
Package / Case : SOT-428
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.0105 Ohms


Parameters:

Technical/Catalog InformationPSMN010-55D,118
VendorNXP Semiconductors
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C75A
Rds On (Max) @ Id, Vgs10.5 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds 3300pF @ 20V
Power - Max125W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs55nC @ 5V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Drawing Number568; SOT428; ; 3
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names PSMN010 55D,118
PSMN01055D,118



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