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PSMN040-200W

MOSFET RAIL PWR-MOS

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SeekIC No. : 00161465 Detail

PSMN040-200W: MOSFET RAIL PWR-MOS

PSMN040-200W Data Sheet

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Part Number:
PSMN040-200W
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 50 A
Resistance Drain-Source RDS (on) : 0.04 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Rail    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Continuous Drain Current : 50 A
Drain-Source Breakdown Voltage : 200 V
Package / Case : TO-247
Packaging : Rail
Resistance Drain-Source RDS (on) : 0.04 Ohms


Features:

• 'Trench' technology
• Very low on-state resistance
• Fast switching
• Low thermal resistance


Application

• d.c. to d.c. converters
• switched mode power supplies

The PSMN040-200W is supplied in the SOT429 (TO247) conventional leaded package.


Pinout

Connection Diagram


Specifications

SYMBOL
 PARAMETER CONDITIONS
MIN.
MAX.
UNIT
VDSS
 Drain-source voltage Tj = 25 to 175
-
200
V
VDGR
 Drain-gate voltage Tj = 25 to 175; RGS = 20 k
-
200
V
VGS
 Gate-source voltage
-
± 20
V
ID
 Continuous drain current Tmb = 25
-
50
A
 Tmb = 100
-
36
A
IDM
 Pulsed drain current Tmb = 25
-
200
A
PD
 Total power dissipation Tmb = 25
-
300
W
Tj, Tstg
 Operating junction andstorage temperature
-55
175



Description

SiliconMAX products PSMN040-200W use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating.




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