PSMN1R7-30YL,115, US $ .44-.63 , NXP Semiconductors, PSMN1R7-30YL,115 DataSheet download, circuit diagram from SeekIC.com

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PSMN1R7-30YL,115: MOSFET

PSMN1R7-30YL,115 Data Sheet

US $ .44~.63 / Piece | Get Latest Price

Part Number:: PSMN1R7-30YL,115
Mfg:: NXP Semiconductors
Supply Ability:: 5000

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	30 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	100 A
Resistance Drain-Source RDS (on) :	1.7 mOhms	Configuration :	Single Dual Source
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOT-669 (LFPAK)	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 100 A
Configuration : Single Dual Source
Resistance Drain-Source RDS (on) : 1.7 mOhms
Package / Case : SOT-669 (LFPAK)

Parameters:

Technical/Catalog Information	PSMN1R7-30YL,115
Vendor	NXP Semiconductors (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	100A
Rds On (Max) @ Id, Vgs	1.7 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds	5057pF @ 12V
Power - Max	109W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	77.9nC @ 10V
Package / Case	LFPAK
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PSMN1R7 30YL,115 PSMN1R730YL,115 568 4678 1 ND 56846781ND 568-4678-1

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PSMN1R7-30YL,115

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