PT334-6B

Input Type :
Maximum Collector Emitter Voltage :
Maximum Collector Emitter Saturation Voltage :
Isolation Voltage :
Current Transfer Ratio :
Maximum Forward Diode Voltage :
Maximum Collector Current :
Maximum Power Dissipation :
Maximum Operating Temperature :
Minimum Operating Temperature :
Package / Case :
Packaging :


Features:

•Fast response time
•High photo sensitivity




Application

•Optoelectronic switch
•VCRs ,Video camera
•Floppy disk drive
•Infrared applied system




Specifications

Parameter	Symbol	Rating	Units	Notice
Collector-Emitter Voltage	VCEO	30	V
Emitter-Collector-Voltage	VECO	5	V
Collector Current	IC	20	mA
Operating Temperature	Topr	-25 ~ +85
Storage Temperature	Tstg	-40 ~ +85
Soldering Temperature	Tsol	260		4mm from mold body less than 5 seconds
Power Dissipation at (or below) 25 Free Air Temperature	Pc	75	mW

Description

PT334-6B is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard 5 mm package. The package is an IR filter, spectrally match to infrared emitter diode .