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PTC4001T

Features: · Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Interdigitated structure provides high emitter efficiency· Gold metallization realizes very good characteristics stability and excellent lifetime· Multicell geometry gives good balan...

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SeekIC No. : 004466844 Detail

PTC4001T: Features: · Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Interdigitated structure provides high emitter efficiency· Gold metallization real...

PTC4001T Data Sheet

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Part Number:
PTC4001T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Diffused emitter ballasting resistors
    providing excellent current sharing
    and withstanding a high VSWR
· Interdigitated structure provides
    high emitter efficiency
· Gold metallization realizes very
    good characteristics stability and
    excellent lifetime
· Multicell geometry gives good
    balance of dissipated power and
    low thermal resistance.


Application

Common collector oscillator circuits under CW conditions in military and professional applications up to 5 GHz.




Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 40 V
VCES collector-emitter voltage RBE = 70W - 35 V
VCEO collector-emitter voltage open base - 16 V
VEBO emitter-base voltage open collector - 3 V
IC collector current   - 0.25 A
Ptot total power dissipation Tmb = 75 °C - 4 W
Tstg storage temperature   -65 +200 °C
Tj junction temperature   - 200 °C
Tsld soldering temperature t <10 s; note 1 - 235 °C



Description

NPN silicon planar epitaxial microwave transistor PTC4001T in a SOT440A metal ceramic flange package with collector connected to flange.




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