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Part Number: PTC4001T

 

 

 

 

Description: NPN silicon planar epitaxial microwave transistor in a SOT440A metal ceramic flange package with colle...


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PTC4001T General Description


NPN silicon planar epitaxial microwave transistor in a SOT440A metal ceramic flange package with collector connected to flange.

PTC4001T Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 40 V
VCES collector-emitter voltage RBE = 70W - 35 V
VCEO collector-emitter voltage open base - 16 V
VEBO emitter-base voltage open collector - 3 V
IC collector current   - 0.25 A
Ptot total power dissipation Tmb = 75 °C - 4 W
Tstg storage temperature   -65 +200 °C
Tj junction temperature   - 200 °C
Tsld soldering temperature t <10 s; note 1 - 235 °C

PTC4001T Features

· Diffused emitter ballasting resistors
    providing excellent current sharing
    and withstanding a high VSWR
· Interdigitated structure provides
    high emitter efficiency
· Gold metallization realizes very
    good characteristics stability and
    excellent lifetime
· Multicell geometry gives good
    balance of dissipated power and
    low thermal resistance.

PTC4001T Typical Application

Common collector oscillator circuits under CW conditions in military and professional applications up to 5 GHz.

PTC4001T datasheet

PTC4001T
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