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PTF10041

RF Amplifier RF LDMOS Transistor

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SeekIC No. : 00613134 Detail

PTF10041: RF Amplifier RF LDMOS Transistor

PTF10041 Data Sheet

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Part Number:
PTF10041
Mfg:
TriQuint Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description

Type :
Operating Frequency :
Noise Figure :
Bandwidth :
Output Intercept Point :
Operating Supply Voltage :
Supply Current :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Packaging :


Features:

• Guaranteed Performance at 1.99 GHz, 26 VDS
- Output Power = 12 Watts Min
- Power Gain = 10 dB Min
• Full Gold Metallization
• Silicon Nitride Passivated
• Excellent Thermal Stability
• Back Side Common Source
• 100% Lot Traceability


Specifications

Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 Vdc
Gate-Source Voltage VGS ±20 Vdc
Operating Junction Temperature TJ 200 °C
Total Device Dissipation PD 58 Watts
Above 25°C derate by		 PD 58
0.33		 Watts
W/°C
Storage Temperature TSTG 150 °C
Thermal Resistance (TCASE = 70°C) RJC 3.0 °C/W



Description

The PTF 10041 is a 12watt GOLDMOS FET intended for large signal amplifier applications from 1.0 to 2.0 GHz. It operates at 38% efficiency with 10 dB minimum gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.




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