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MFG:INFINEON
Part Number: PTF211802
MFG: INFINEON
Description: The PTF211802 is a 180 W, internally matched, laterally doublediffused, GOLDMOS pushpull FET intended ...
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PTF211802
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DataSheet
General Description
PTF211802 General Description
The PTF211802 is a 180 W, internally matched, laterally doublediffused, GOLDMOS pushpull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.
PTF211802 Maximum Ratings
| Parameter | Symbol | Value | Unit | |
| Drain-Source Voltage | VDSS | 65 | Vdc | |
| Gate-Source Voltage | VGS | 0.5 to +12 | Vdc | |
| Operating Junction Temperature | TJ | 200 | °C | |
|
Total Device Dissipation Above 25°C derate by |
PTF211802A | PD |
498 2.85 |
Watts W/°C |
|
Total Device Dissipation Above 25°C derate by |
PTF211802E | PD |
647 3.70 |
Watts W/°C |
| Storage Temperature Range | TSTG | 40 to +150 | °C | |
| Thermal Resistance (TCASE = 70°C, 130 W CW) |
PTF211802A PTF211802E |
RqJC RqJC |
0.35 0.27 |
°C/W °C/W |
PTF211802 Features
• Broadband internal matching
• Typical twocarrier WCDMA performance
- Average output power = 38 W
- Gain = 15 dB
- Efficiency = 25%
- IM3 = 37 dBc
- ACPR < 42 dBc
• Typical CW performance
- Output power at P1dB = 180 W
- Efficiency = 50%
• Integrated ESD protection: Human Body
Model, Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
180 W (CW) output power
• Typical twocarrier WCDMA performance
- Average output power = 38 W
- Gain = 15 dB
- Efficiency = 25%
- IM3 = 37 dBc
- ACPR < 42 dBc
• Typical CW performance
- Output power at P1dB = 180 W
- Efficiency = 50%
• Integrated ESD protection: Human Body
Model, Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
180 W (CW) output power
PTF211802
PDF/DataSheet Download
- Datasheet: PTF211802
- File Size: 173208 KB
- Manufacturer: INFINEON [Infineon Technologies AG]
- Click here to Download
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PTF211802 Relative Products
PTF211301
The PTF211301 is a 130W, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single and twocarrier WCDMA operation from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.
PTF210901
The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.
PTF210451
The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.
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The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.
PTF191601
The PTF191601 is a 160 W, internally matched GOLDMOS FET intended for GSM and EDGE applications in the 1930 to 1990 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
PTF181301
The PTF181301 is a 130 W, internally matched GOLDMOS FET intended for GSM and EDGE applications in the 1805 to 1880 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
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