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PTFA082201EV1

Transistors RF MOSFET Power RFP-LDMOS GOLDMOS 8

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SeekIC No. : 00220367 Detail

PTFA082201EV1: Transistors RF MOSFET Power RFP-LDMOS GOLDMOS 8

PTFA082201EV1 Data Sheet

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Part Number:
PTFA082201EV1
Mfg:
Infineon Technologies
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/19

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 869 MHz to 894 MHz Gain : 18 dB
Output Power : 220 W Drain-Source Breakdown Voltage : 65 V
Continuous Drain Current : 1.95 A Gate-Source Breakdown Voltage : 12 V
Maximum Operating Temperature : + 150 C Package / Case : H-36260-2
Packaging : Tray    

Description

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 65 V
Packaging : Tray
Gain : 18 dB
Gate-Source Breakdown Voltage : 12 V
Output Power : 220 W
Package / Case : H-36260-2
Frequency : 869 MHz to 894 MHz
Continuous Drain Current : 1.95 A


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