Specifications Characteristics Symbol PTMB75B12 Unit Collector-Emitter Voltage VCES 1200 V Gate - Emitter Voltage VGES +/ - 20 V Collector current DC IC 150 A 1 ms ICP 300 Collector Power Dissipation PC 560 W Junction temperature Tj -40 to +150 °C Sto...
PTMB150A6: Specifications Characteristics Symbol PTMB75B12 Unit Collector-Emitter Voltage VCES 1200 V Gate - Emitter Voltage VGES +/ - 20 V Collector current DC IC 150 A 1 ms ICP...
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Specifications Item Symbol PTMB100B12C Unit Collector-Emitter Voltage VCES 600 ...
Specifications Characteristics Symbol PTMB75B12 Unit Collector-Emitter Voltage VCES 1...
| Characteristics | Symbol | PTMB75B12 | Unit | |
| Collector-Emitter Voltage | VCES | 1200 | V | |
| Gate - Emitter Voltage | VGES | +/ - 20 | V | |
| Collector current | DC | IC | 150 | A |
| 1 ms | ICP | 300 | ||
| Collector Power Dissipation | PC | 560 | W | |
| Junction temperature | Tj | -40 to +150 | °C | |
| Storage temperature range | Tstg | -40 to +125 | °C | |
| Isolation Voltage Terminal to Base AC, 1 min.) | VISO | 2500 | V | |
| Mounting Torque | Module Base to Heatsink | FTOR | 2 | N•m |
| Bus Bar to Main Terminals | 1.4 | |||