PU3114

The PU3114 is designed as silicon NPN epitaxial planar type.

PU3114 has five features. The first one is it would have low collector to emitter saturation voltage. The next one is that it would have high speed switching. The next one is it would have good linearity of DC current gain. The next one is it would have high collector current. The next one is it would have 3 NPN elements. That are all the main features.

Some absolute maximum ratings of PU3114 have been concluded into several points as follow. The first one is about its collector to base voltage which would be 40V. The next one is about its collector to emitter voltage which would be 20V. The next one is about its emitter to base voltage which would be 5V. The next one is about its peak collector current which would be 12A. The next one is about its collector current which would be 7A. The next one is about its power dissipation which would be 15W. The next one is about its junction temperature range which would be 150°C. The next one is about its storage temperature range which would be from -55 to +150°C.

Also there are some electrical characteristics of PU3114 having been concluded into several points as follow. The first one is about its collector cutoff current which would be max 50A with condition of Vcb=40V and Ie=0. The next one is about its emitter ctoff current which would be max 50A with condition of Veb=5V and Ic=0. The next one is about its collector to emitter voltage which would be min 20V with condition of Ic=10mA and Ib=0. The next one is about its DC current gain which would be min 60 and max 260 with condition of Vce=2V and Ic=2A. The next one is collector to emitter saturation voltage which would be max 0.6V. The next one is about its transition frequency which would be typ 150MHz with condition of Vce=10V, Ic=0.5A and f=1MHz. And so on. For more information please contact us.