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PXB16050U

Features: · Input and output matching cells allow an easier design of circuits· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Interdigitated structure provides high emitter efficiency· Gold metallization realizes very stable characteristics...

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PXB16050U: Features: · Input and output matching cells allow an easier design of circuits· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Interdigitated...

PXB16050U Data Sheet

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Part Number:
PXB16050U
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

· Input and output matching cells allow an easier design of circuits
· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
· Interdigitated structure provides high emitter efficiency
· Gold metallization realizes very stable characteristics  and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance.


Application

Common-base class C power amplifiers at frequencies between 1.5 and 1.8 GHz




Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage open emitter - 45 V
VCEO collector-emitter voltage open base - 15 V
VCES collector-emitter voltage RBE = 0 - 45 V
VEBO emitter-base voltage open collector - 3 V
IC collector current (DC )   - 6 A
Ptot total power dissipation Tmb = 75 - 67 W
Tstg storage temperature   -65 +200
Tj junction temperature   - 200
Tsld soldering temperature t 10 s; note 1 - 235



Description

NPN silicon planar epitaxial microwave power transistor PXB16050U in a SOT439A metal ceramic flange package with base connected to the flange.




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