Position: Home  > All Categories> Integrated Circuits (ICs) > PXB16050U

PXB16050U

Features: · Input and output matching cells allow an easier design of circuits· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Interdigitated structure provides high emitter efficiency· Gold metallization realizes very stable characteristics...

product image

PXB16050U Picture
See larger image
SeekIC No. : 004467437 Detail

PXB16050U: Features: · Input and output matching cells allow an easier design of circuits· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Interdigitated...

PXB16050U Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
PXB16050U
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/26

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· Input and output matching cells allow an easier design of circuits
· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
· Interdigitated structure provides high emitter efficiency
· Gold metallization realizes very stable characteristics  and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance.


Application

Common-base class C power amplifiers at frequencies between 1.5 and 1.8 GHz




Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage open emitter - 45 V
VCEO collector-emitter voltage open base - 15 V
VCES collector-emitter voltage RBE = 0 - 45 V
VEBO emitter-base voltage open collector - 3 V
IC collector current (DC )   - 6 A
Ptot total power dissipation Tmb = 75 - 67 W
Tstg storage temperature   -65 +200
Tj junction temperature   - 200
Tsld soldering temperature t 10 s; note 1 - 235



Description

NPN silicon planar epitaxial microwave power transistor PXB16050U in a SOT439A metal ceramic flange package with base connected to the flange.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Inductors, Coils, Chokes
DR127-330-R
SD53-100-R
Optoelectronics
SFH7770
TLP423J
Isolators
HCPL062N
HCPL316J
Power Supplies - Board Mount
HC-06
PM150RSA060-S81AH0G
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
Optical Inspection Equipment
AA924
A21K4B
View more