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MFG:ONS  Package Cooled:SOT-223(TO-261)  D/C:09+  

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Part Number: PZT751T1G

 

MFG: ONS

Package Cooled: SOT-223(TO-261)

D/C: 09+

Description: This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The...


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PZT751T1G General Description


This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.

PZT751T1G Maximum Ratings

Rating Symbol Value Unit
Collector-emitter voltage VCE0 60 Vdc
Collector-base voltage VCB0 80 Vdc
Emitter-base voltage VEB0 5.0 Vdc
Collector current IC 2.0 Adc
Total power dissipation @ TA = 124(1)
Derate above 25
PD 0.8
6.4
W
mW/
Storage temperature range Tstg 65 to 150
Junction temperature Tj 150

PZT751T1G Features

• High Current: 2.0 A
• The SOT−223 Package can be soldered using wave or reflow.
• SOT−223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die
• NPN Complement is PZT651T1
• Pb−Free Package is Available

PZT751T1G datasheet

PZT751T1G
PDF/DataSheet Download

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PZT751T1G Relative Products

  • PZT751T1D

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  • PZT651

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