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PZTM1102

Features: · Low output capacitance· Fast switching time· Integrated Schottky protection diode.Application· High-speed switching for industrial applications.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT PNP transistor VCBO collector-base voltage ope...

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SeekIC No. : 004467555 Detail

PZTM1102: Features: · Low output capacitance· Fast switching time· Integrated Schottky protection diode.Application· High-speed switching for industrial applications.PinoutSpecifications SYMBOL PA...

PZTM1102 Data Sheet

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Part Number:
PZTM1102
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Low output capacitance
· Fast switching time
· Integrated Schottky protection diode.


Application

· High-speed switching for industrial applications.


Pinout

Connection Diagram


Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PNP transistor
VCBO collector-base voltage open emitter - -40 V
VCES collector-emitter voltage VBE = 0 - -40 V
VEBO emitter-base voltage open collector - -6 V
IC collector current (DC)   - -200 mA
Schottky barrier diode
VR continuous reverse voltage   - 40 V
IF forward current (DC)   - 1 A
IF(AV) average forward current   - 1 A
P power dissipation up to Tamb = 25 ; note 1 - 0.5 W
Tj junction temperature reverse current applied - 125
forward current applied - 150
Combined device
Ptot total power dissipation up to Tamb = 25 ; note 2 - 1.2 W
Tamb operating ambient temperature   -55 +150
Tstg storage temperature   -55 +150
Tj junction temperature   - 150

Notes
1. An additional copper area of >20 mm2 is required for pin 1, if power dissipation in the Schottky die is >0.5 W.
2. It is not allowed to dissipate the total power of 1.2 W in the Schottky die only.





Description

Combination of a PNP transistor PZTM1102 and a Schottky barrier diode in a plastic SOT223 package. NPN complement: PZTM1101.




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