PZT 3906

The PZT 3906 is a PNP Silicon Switching Transistor.Features of the PZT 3906 are:(1)High DC current gain 0.1 mA to 100 mA;(2)Low collector-emitter saturation voltage;(3)Complementary type: PZT 3904 (NPN).

The absolute maximum ratings of the PZT 3906 can be summarized as:(1)Collector-emitter voltage:40 V;(2)Collector-base voltage:40V;(3)Emitter-base voltage:5V;(4)Collector current:200 mA;(5)Total power dissipation, TS = 80°C:1.5 W;(6)Junction temperature:150 °C;(7)Storage temperature range: 65 . + 150°C.

The electrical characteristics at TA = 25 °C (unless otherwise specified) of the PZT 3906 can be summarized as:(1)Collector-emitter breakdown voltage IC = 1 mA, IB = 0:40V;(2)Collector-base breakdown voltage IC = 10 mA, IB = 0:40V;(3)Emitter-base breakdown voltage IE = 10 mA, IC = 0:5V;(4)Collector-base cutoff current VCB = 30 V, IE = 0:50nA;(5)Collector-emitter cutoff current VCE = 30 V, + VBE = 0.5 V:50nA;(6)Collector-base cutoff current VCE = 30 V, + VBE = 0.5 V:50nA;(7)DC current gain1):60(IC = 0.1 mA, VCE = 1 V),80(IC = 1 mA, VCE = 1 V),100(IC = 10 mA, VCE = 1 V),60(IC = 50 mA, VCE = 1 V),30(IC = 100 mA, VCE = 1 V);(8)Collector-emitter saturation voltage1):0.25V(IC = 10 mA, IB = 1 mA),0.4V(IC = 50 mA, IB = 5 mA);(9)Base-emitter saturation voltage:0.85V(IC = 10 mA, IC = 1 mA),0.95V(IC = 50 mA, IC = 5 mA).