Q62702-B63

The Q62702-B63 is NPN silicon epibase power transistors in TO 126 plastic package(12A 3 DIN 41 869, sheet 4). The collector is electrically connected to the metallic mounting area. The transistors ate paticularly suitable for use in push-pull output stages, driver stages as well as for general AF applications.

The following is about the absolute maximum ratings of Q62702-B63: (1)collector-emitter voltage VCEO: 22V; (2)collector-emitter voltage VCES: 22V; (3)collector-base voltage VCBO: 22V; (4)emitter-base voltage VEBO: 5V; (5)collector current: 4A; (6)collector peak current: 7A; (7)emitter peak current: 7A; (8)base current: 1A; (9)junction temperature: 150; (10)storage temperature: -55 to 150.

The electrical characteristics of the Q62702-B63 are: (1)collector-emitter breakdown voltage VCEO > 22V; (2)collector-emitter breakdown voltage VCES > 22V; (3)collector-base breakdown voltage VCBO > 22V; (4)emitter-base breakdown voltage VEBO > 5V; (5)collector cutoff current < 100A; (6)base-emitter forward voltage < 1.1V; (7)collector-emitter saturation voltage < 0.8V; (8)DC current gain > 40.