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Q67040-S4368

Features: • Worlds first 600V Schottky diode• Revolutionary semiconductor material - Silicon Carbide• Switching behavior benchmark• No reverse recovery• No temperature influence on the switching behavior• Ideal diode for Power Factor Correction up to 800W1)̶...

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Q67040-S4368: Features: • Worlds first 600V Schottky diode• Revolutionary semiconductor material - Silicon Carbide• Switching behavior benchmark• No reverse recovery• No temperature ...

Q67040-S4368 Data Sheet

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Part Number:
Q67040-S4368
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

• Worlds first 600V Schottky diode
• Revolutionary semiconductor
  material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on
  the switching behavior
• Ideal diode for Power Factor
  Correction up to 800W1)
• No forward recovery


Specifications

Parameter Symbol Value Unit
Continuous forward current, TC=100°C IF 4 A
RMS forward current, f=50Hz IFRMS 5.6 A
Surge non repetitive forward current, sine halfwave
TC=25°C, tp=10ms		 IFSM 12.5 A
Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.1		 IFRM 18 A
Non repetitive peak forward current
tp=10s, TC=25°C		 IFMAX 40 A
i 2t value, TC=25°C, tp=10ms i2dt 0.78 A²s
Repetitive peak reverse voltage VRRM 600 V
Surge peak reverse voltage VRSM 600 V
Power dissipation, TC=25°C Ptot 36.5 W
Operating and storage temperature Tj , Tstg -55... +175 °C



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