Q67040-S4470

The Q67040-S4470 is designed as one kind of silicon carbide schottky diode.

Q67040-S4470 has six features. (1)World first 600V schottky diode. (2)Revolutionary semiconductor material: silicon carbide. (3)Switching behavior henchmark. (4)No reverse recovery. (5)No temperature influence on the switching behavior. (6)No forward recovery. Those are all the main features.

Some absolute maximum ratings of Q67040-S4470 have been concluded into several points as follow. (1)Its continuous forward current would be 12A. (2)Its RMS forward current f=50Hz would be 17A. (3)Its surge non-repetitive forward curent, sine halfwave would be 36A. (4)Its repetitive peak forward current would be 49A. (5)Its non-repetitive peak forward current would be 120A. (6)Its I2t vlue would be 6.48A2s. (7)Its repetitive peak reverse voltage would be 600V. (8)Its surge peak reverse voltage would be 600V. (9)Its power dissipation would be 88.2W. (10)Its operating and storage temperature range would be from -55°C to 175°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of Q67040-S4470 are concluded as follow. (1)Its diode forward voltage would be typ 1.5V and max 1.7V at If=12A and Tj=25°C and would be typ 1.7V and max 2.1V at If=12A and Tj=150°C. (2)Its reverse current would be typ 40uA and max 400uA at Vr=600V and Tj=25°C and would be typ 100uA and max 2000uA at Vr=600V and Tj=150°C. (3)Its total capacitance charge would be typ 30nC. (4)Its total capacitance would be typ 450pF at Vr=1V, Tc=25°C and f=1MHz and would be typ 45pF at Vr=300V, Tc=25°C and f=1MHz and would be typ 43pF at Vr=600V and Tc=25°C and f=1MHz. And so on. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information please contact us for details. Thank you!