QDFF-120

Features: SpecificationsDescriptionThe QDFF-120 is designed as high speed pinFET receiver utilzing a GaAs IC preamplifier and an AR-coated low noise InGaAs detector, packaged in an industry standard 14-pin DIL package. The QDFF operates on a similar principle to the QDFM wide dynamic range pinFET ...

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SeekIC No. : 004467952 Detail

QDFF-120: Features: SpecificationsDescriptionThe QDFF-120 is designed as high speed pinFET receiver utilzing a GaAs IC preamplifier and an AR-coated low noise InGaAs detector, packaged in an industry standard...

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Part Number:
QDFF-120
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:






Specifications






Description

The QDFF-120 is designed as high speed pinFET receiver utilzing a GaAs IC preamplifier and an AR-coated low noise InGaAs detector, packaged in an industry standard 14-pin DIL package. The QDFF operates on a similar principle to the QDFM wide dynamic range pinFET module. Two versions are available, one at 1200MHz, the other at 1800MHz bandwidth.

QDFF-120 has six features. The first one is it would have telecom trunk and junction applications. The next one is it would have gigabit compenents for telecom. The next one is it would have high responsivity 1300/1550 nm InGaAs detector. The next one is it would have high speed GaAs IC transimpedance preamplifier. The next one is it would have high speed modulation and high gain. The next one is it would be multimode fiber. That are all the main features.

Some important specifications of QDFF-120 have been concluded into several points as follow. The first one is about its maximum optical input which would be max -2dBm. The next one is about its effective transimpedance which would be min 400 and typ 500. The next one is about its peak-peak output voltage at max optical input which would be typ 300mV. The next one is about its photodiode responsivity which would be min 0.75A/W and typ 0.85A/W. The next one is about its specitral response which would be min 1100nm and max 1600nm. The next one is about its pinFET bandwidth which would be min 1200MHz. The next one is about its detector leakage current which would be typ 5nA and max 20nA. The next one is about its output impedance which would be typ 50 ohms. The next one is about its operating temperature range which would be from 0°C to 60°C. The next one is about its storage temperature range which would be from -40°C to +85°C. And so on. For more information please contact us.






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