QM150DY-2H

The QM150DY-2H is designed as one kind of MITSUBSHI transistor modules for high power switching use.

QM150DY-2H has five features. (1)Its collector current would be 150A. (2)Its collector to emitter voltage would be 1000V. (3)Its DC current gain would be 750. (4)Insulated type. (5)UL recognized. Those are all the main features.

Some absolute maximum ratings of QM150DY-2H have been concluded into several points as follow. (1)Its collector to emitter voltage woud be 1000V. (2)Its collector to base voltage would be 1000V. (3)Its emitter to base voltage would be 7V. (4)Its collector current would be 150A. (5)Its collector reverse current would be 150A. (6)Its collector dissipation would be 1000W. (7)Its base current would be 8A. (8)Its surge collector reverse current (forward diode current) would be 1500A. (9)Its junction temperature range would be from -40°C to 150°C. (10)Its storage temperature range would be from -40°C to 125°C. (11)Its isolation voltage would be 2500V. (12)Its mounting torque would be 1.96Nm to 2.94Nm. (13)Its weight would be 470g. QM150DY-2H should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of QM150DY-2H are concluded as follow. (1)Its collector cutoff current would be max 4.0uA. (2)Its emitter current would be max 100mA. (3)Its collector to emitter saturation voltage would be max 4.0V. (4)Its base to emitter saturation voltage would be would be max 4.0V. (5)Its collector to emitter reverse voltage would be max 1.8V. (6)Its DC current gain would be min 750. (7)Its switching time would be max 2.5us. (8)Its thermal resistance junction to case would be max 0.125°C/W for transistor part (per 1/2 module) and would be max 0.6°C/W for diode part (per 1/2 module). And so on. If you have any question or suggestion or want to know more information about QM150DY-2H please visit our website and contact us for details. Thank you!