QS5U21 Selling Leads, Price trend, QS5U21 DataSheet download, circuit diagram from SeekIC.com

Features: · The QS5U21 conbines Pch MOSFET with a Schottky barrier diode in a single TSMT5 package.· Pch MOSFET have a low on-state resistance with a fast switching.· Pch MOSFET is reacted a low voltage drive(2.5V)· The Independently connected Schottky barrier diode have a low forward voltate.Appl...

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SeekIC No. : 004468539 Detail

QS5U21: Features: · The QS5U21 conbines Pch MOSFET with a Schottky barrier diode in a single TSMT5 package.· Pch MOSFET have a low on-state resistance with a fast switching.· Pch MOSFET is reacted a low vol...

QS5U21 Data Sheet

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Part Number:: QS5U21
Supply Ability:: 5000

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1~5000

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Negotiable

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Upload time: 2025/12/4

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QS5U12 evaluate
PinoutDescriptionFeatures of the QS5U12 are:(1)the QS5U12 combines Nch MOSFET with a schottky barr...
QS5U12TR evaluate
US $.12 - .12 / Piece

MOSFET N-CH 30V 2A TSMT5
QS5U16TR evaluate
US $.14 - .3 / Piece

MOSFET N-CH 30V 2A

Product Details

Description

Features:

· The QS5U21 conbines Pch MOSFET with a Schottky barrier diode in a single TSMT5 package.
· Pch MOSFET have a low on-state resistance with a fast switching.
· Pch MOSFET is reacted a low voltage drive(2.5V)
· The Independently connected Schottky barrier diode have a low forward voltate.

Application

·Load switch, DC/DC conversion

Specifications

Parameter		Symbol	Limits	Unit
Drain-source voltage		V_DSS	−20	V
Gate-source voltage		V_GSS	±12	V
Drain current	Continuous	I_D	±1.5	A
Drain current	Pulsed	I_DP	±6.0	A∗1
Source current (Body diode)	Continuous	I_S	−0.75	A
Source current (Body diode)	Pulsed	I_SP	−3.0	A∗1
Channel temperature		T_ch	150	°C

Parameter	Symbol	Limits	Unit
Repetitive peak reverse voltage	V_RM	30	V
Reverse voltage	V_R	20	V
Forward current	I_F	0.5	A
Forward current surge peak	I_FSM	0.2	A∗2
Junction temperature	Tj	125	°C

Parameter	Symbol	Limits	Unit
Total power dissipatino	P_D	1.0	W/TOTAL∗3
Range of strage temperature	Tstg	−40~+125	°C

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QS5U21

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