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QS5U23

Features: · The QS5U23 conbines Pch MOSFET with a Schottky barrier diode in a single TSMT5 package.· Pch MOSSFET have a low on-state resistance with a fast switching.· Pch MOSFET is reacted a low voltage drive(2.5V)· The independently connected Schottky barrier diode have a low forward voltage.App...

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SeekIC No. : 004468540 Detail

QS5U23: Features: · The QS5U23 conbines Pch MOSFET with a Schottky barrier diode in a single TSMT5 package.· Pch MOSSFET have a low on-state resistance with a fast switching.· Pch MOSFET is reacted a low vo...

QS5U23 Data Sheet

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Part Number:
QS5U23
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Description



Features:

 · The QS5U23 conbines Pch MOSFET with a Schottky barrier diode in a single TSMT5 package.
 · Pch MOSSFET have a low on-state resistance with a fast switching.
 · Pch MOSFET is reacted a low voltage drive(2.5V)
 · The independently connected Schottky barrier diode have a low forward voltage.




Application

Load switch , DC/DC conversion


Specifications

< MOSFET >
Parameter
Symbol
Limits
Unit
Drain−source voltage
VDSS
-12
V
Gate−source voltage
VGSS
±12
V
Drain current Continuous
ID
±1.5
A
Pulsed
IDP
±6.0
A PW10 S,Duty cycle 1%
Source current
(Body diode)		 Continuous
IS
-0.75
A
Pulsed
ISP
-0.3
A PW10 S,Duty cycle 1%
Channel temperature
Tch
150

< Di >
Repetitive peak reverse voltage VRM 30 V
Reverse voltage VR 20 V
Forward current IF 0.5 A
Forward current surge peak IFSM 20 A 60Hz / 1CYC
Junction temperature Tj 125

< MOSFET AND Di >
Total power dissipation PD 1.0 W / TOTAL MOUNTED ON
A CERAMIC BOARD
Range of strage temperature Tstg −40∼125



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