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QS6J1

Features: ·Two Pch MOSFET transistors in a single TSMT6 package.·Pch Treueh MOSFET have a low on-state resistance with a fast switching.·Nch Treueh MOSFET is reacted a low voltage drive (2.5V).Application·SwitchSpecifications Parameter Symbol Limits Unit Drain-source voltage ...

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QS6J1: Features: ·Two Pch MOSFET transistors in a single TSMT6 package.·Pch Treueh MOSFET have a low on-state resistance with a fast switching.·Nch Treueh MOSFET is reacted a low voltage drive (2.5V).Appli...

QS6J1 Data Sheet

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Part Number:
QS6J1
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Two Pch MOSFET transistors in a single TSMT6 package.
 ·Pch Treueh MOSFET have a low on-state resistance with a fast switching.
 ·Nch Treueh MOSFET is reacted a low voltage drive (2.5V).


Application

·Switch


Specifications

Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
−20
V
Gate-source voltage
VGSS
±12
V
Drain current Continuous
ID
±1.5
A
Pulsed
IDP
±6
A∗1
Source current
(Body diode)		 Continuous
IS
−0.75
A
Pulsed
ISP
6
A∗1
Total power dissipation
PD
1.25
W/Total
Channel temperature
Tch
150
°C
Range of Storage temperature
Tstg
−55 to +150
°C







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