Position: Home  > All Categories> Integrated Circuits (ICs) > QS8J1TR

QS8J1TR

MOSFET P Chan-12V-4.5A Mid-PowerSwitching

product image

QS8J1TR Picture
See larger image
SeekIC No. : 00151219 Detail

QS8J1TR: MOSFET P Chan-12V-4.5A Mid-PowerSwitching

QS8J1TR Data Sheet

floor Price/Ceiling Price

US $ .26~.74 / Piece | Get Latest Price
Part Number:
QS8J1TR
Mfg:
ROHM Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.74
  • $.59
  • $.45
  • $.26
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 12 V
Gate-Source Breakdown Voltage : +/- 10 V Continuous Drain Current : 4.5 A
Resistance Drain-Source RDS (on) : 29 mOhms at 4.5 V Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TSMT-8 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Dual Dual Drain
Drain-Source Breakdown Voltage : - 12 V
Continuous Drain Current : 4.5 A
Gate-Source Breakdown Voltage : +/- 10 V
Resistance Drain-Source RDS (on) : 29 mOhms at 4.5 V
Package / Case : TSMT-8


Parameters:

Technical/Catalog InformationQS8J1TR
VendorRohm Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 P-Channel (Dual)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25° C4.5A
Rds On (Max) @ Id, Vgs29 mOhm @ 4.5A, 4.5V
Input Capacitance (Ciss) @ Vds 2450pF @ 6V
Power - Max1.25W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs31nC @ 4.5V
Package / Case*
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names QS8J1TR
QS8J1TR



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
Tools
TCP202
G084SN05 V.3
Crystals and Oscillators
WT325BI0030.000000
2SB49
Memory Cards, Modules
WT32
VTL5C7
Relays
WIMA MKP4 0.22UF 630V
WIMA MKP4 4.7UF 630VDC
Integrated Circuits (ICs)
TA8435H
1MB12-140
View more