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QS8J1TR

MOSFET P Chan-12V-4.5A Mid-PowerSwitching

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SeekIC No. : 00151219 Detail

QS8J1TR: MOSFET P Chan-12V-4.5A Mid-PowerSwitching

QS8J1TR Data Sheet

floor Price/Ceiling Price

US $ .26~.74 / Piece | Get Latest Price
Part Number:
QS8J1TR
Mfg:
ROHM Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.74
  • $.59
  • $.45
  • $.26
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/23

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 12 V
Gate-Source Breakdown Voltage : +/- 10 V Continuous Drain Current : 4.5 A
Resistance Drain-Source RDS (on) : 29 mOhms at 4.5 V Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TSMT-8 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Dual Dual Drain
Drain-Source Breakdown Voltage : - 12 V
Continuous Drain Current : 4.5 A
Gate-Source Breakdown Voltage : +/- 10 V
Resistance Drain-Source RDS (on) : 29 mOhms at 4.5 V
Package / Case : TSMT-8


Parameters:

Technical/Catalog InformationQS8J1TR
VendorRohm Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 P-Channel (Dual)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25° C4.5A
Rds On (Max) @ Id, Vgs29 mOhm @ 4.5A, 4.5V
Input Capacitance (Ciss) @ Vds 2450pF @ 6V
Power - Max1.25W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs31nC @ 4.5V
Package / Case*
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names QS8J1TR
QS8J1TR



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