QSD422

The QSD422 is a silicon phototransistor encapsulated in an infrared transparent,black TO-18 package.

Features of the QSD422 are:(1)steel lead frames for improved reliability in solder mounting;(2)good optical-to-mechanical alignment;(3)plastic package is infrared transparent and tinted to attenuate visible light;(4)mechanically and spectrally matched to the QED423/523 LED;(5)black plastic body allows easy recognition from LED;(6)narrow reception angle;(7)tight production distribution.

The absolute maximum ratings of the QSD422 can be summarized as:(1):the parameter is storage temperature,the rating is -40 to +100,the unit is ;(2):the parameter is operating temperature,the rating is -40 to +100,the unit is ;(3):the parameter is lead temperature (Iron),the rating is 240 for 5 sec.,the unit is ;(4):the parameter is lead temperature (Flow),the rating is 260 for 10 sec.,the unit is ;(5):the parameter is collector-emitter breakdown voltage,the rating is 30,the unit is volts;(6):the parameter is emitter-collector breakdown voltage,the rating is 5.0,the unit is volts;(7):the parameter is power dissipation,the rating is 100,the unit is mW.