QSE112

The QSE112 is designed as a silicon phototransistor encapsulated in a wide angle, infrared transparent, dark blue, plastic sidelooker shell package.

The QSE112 has six features. The first one is tight production distribution with 3:1 min/max ratio. The second one is steel lead frames for improved reliability in solder mounting. The third one is good optical to mechanical alignment. The fourth one is plastic package is infrared transparent and tinted to attenuate visible light. The fifth one is mechanically and spectrally matched to the QEE113 and QEE123 LEDs. The sixth one is dark blue shell body allows easy recognition from LED. That are all the main features.

Some absolute maximum ratings of QSE112 have been conlcuded into several points as follow. The first one is about its storage temperature range which would be from -40°C to +100°C. The second one is about its operating temperature range which would be from -40°C to +100°C. The third one is about its soldring lead temperature which would be 240°C for 5 sec for iron and would be 260°C for 10 sec for flow. The fourth one is about its collector to emitter breakdown voltage which would be 30V. The fifth one is about its emitter to collertor breakdown voltage which would be 5.0V. The sixth one is about its power dissipation which would be 100mW.

And some electrical characteristics about QSE112. The first one is about its collector to emitter breakdown voltage which would be min 30V. The second one is about its emitter to collector breakdown voltage which would be min 5.0V. The third one is about its collector to emitter leakage current which would be max 100nA. The fourth one is about its collector to emitter saturation voltage which would be max 0.4V. And so on. If you have any question or suggestion or want to know more information about QSE112 please contact us.