QVB11423

The QVB11423 is designed as switches with wires attached which allow the user maximum flexibility in applications. Each switch consists of an infrared emitting diode facing an NPN phototransistor across a 0.125 in. (3.18mm) gap. A unique housing design provides a smooth external surface to prevent dust and dirt buildup while molded internal apertures give precise positioning and also provide protection from ambient light interference.

QVB11423 has four features. The first one is it would have fully enclosed design. The second one is 24 inch wire termination. The third one is 0.050 in. and 0.010 in. apertures available. The fourth one is min/max guaranteed limits for Ic(on). That are all the main features.

Some absolute maximum ratings of QVB11423 (Ta=25°C unless otherwise specified) have been concluded into several points as follow. The first one is about its storage temperature range which would be from -40°C to +85°C. The second one is about its operating temperature range which would be from -40°C to +85°C. The third one is about its soldering lead temperature which would be 240°C for 5sec for iron and would be 250°C for 10sec flow.  The fourth one is about its continuous forward current which would be 50mA. The fifth one is about its reverse voltage which would be 5.0V. The sixth one is about its power dissipation which would be 100mW. The seventh one is about its collector to emitter voltage which would be 30V. The eighth one is about its emitter to collector voltage which would be 5.0V. The ninth one is about its collector current which would be 40mA. The tenth one is about its power dissipation which would be 100mW. That are all the main ratings above. And so on. If you have any question or suggestion or want to know more information about QVB11423 please contact us.