R-310 series

The R-310 series consists of a gallium arsenide IRED and a silicon photosensor mounted in an injection-molded housing. It has five unique features: The first one is detects semiconductor wafers. The second one is operating distance 0.050"(1.27 mm). The third one is small physical size. The forth one is three body styles. The fifth one is wavelength-filtered sensor.

There are some absolute amximum ratings about R-310 series when Ta is 25 unless otherwise stated. Storage and operating temperature are -40 to +50. Lead soldering temperature is 240.IRED: Continuous forward current is 40 mA. Peak forward current is 2 A(1us pulse width,300 pps). Reverse voltage is 3 V. Power dissipation is 70 mW. Sensor: Collector-emitter voltage is 30 V. Emitter-collector voltage is 5 V. Power dissipation is 70 mW.Otherwise, there are also some electrical characteristics about it. Input diode: Forward voltage(VF) is 1.10 V min and 1.70 V max when IF is 60 mA. Reverse current(IR) is 100 uA max when VR is 2.0 V.Output phototransistor: Collector-emitter breakdown voltage(V(BR)CEO) is 30 V min when Ic is 1 mA.Emitter-collector breakdown voltage(V(BR)ECO) is 5.0 V min when IE is 100 uA . Drak current(ID) is 100 nA max when VCE is 10 V and Ee is 0.

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