R1011-QH

Features: Integrated LNA, Mixer and LO Buffer Amplifier 1.8 dB Noise Figure 13.0 dB Conversion Gain 4x4mm QFN Package 100% RF, DC and NF TestingPinoutSpecifications Supply Voltage (Vdd) +5.0 VDC Supply Current (Idd) 180 mA Gate Bias Voltage (Vgg) -3 V Max Power Dissipation (Pdiss...

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SeekIC No. : 004468866 Detail

R1011-QH: Features: Integrated LNA, Mixer and LO Buffer Amplifier 1.8 dB Noise Figure 13.0 dB Conversion Gain 4x4mm QFN Package 100% RF, DC and NF TestingPinoutSpecifications Supply Voltage (Vdd) +5.0 ...

floor Price/Ceiling Price

Part Number:
R1011-QH
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/27

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Product Details

Description



Features:

Integrated LNA, Mixer and LO Buffer Amplifier
1.8 dB Noise Figure
13.0 dB Conversion Gain
4x4mm QFN Package
100% RF, DC and NF Testing



Pinout

  Connection Diagram


Specifications

Supply Voltage (Vdd) +5.0 VDC
Supply Current (Idd) 180 mA
Gate Bias Voltage (Vgg) -3 V
Max Power Dissipation (Pdiss) 750 mW
Input Power (Pin) +14 dBm
LO Input Power (Pin) +15 dBm
Storage Temperature (Tstg) -65 to +150
Operating Temperature (Ta) -55 to +85
Channel Temperature (Tch) -40 to MTTF Graph2


(1) Operation of this device above any one of these parameters may cause permanent damage

(2) Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime




Description

Mimix Broadband's 4.5-10.5 GHz QFN packaged receiver has a noise figure of 1.8 dB and 13.0 dB conversion gain across the band. The R1011-QH integrates an LNA, image reject mixer and LO buffer amplifier within a fully molded 4x4mm QFN package. The image reject mixer eliminates the need for a bandpass filter after the LNA to remove thermal noise at the image frequency. I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband. The R1011-QH uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. This device is well suited for Point-to-Point Radio, LMDS, SATCOM and VSAT applications.




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