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R1LP0408C-I

Features: • Single 5 V supply: 5 V ± 10%• Access time: 55/70 ns (max)• Power dissipation: Active: 10 mW/MHz (typ) Standby: 4 W (typ)• Completely static memory. No clock or timing strobe required• Equal access and cycle times• Common data input and output. Three ...

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SeekIC No. : 004468949 Detail

R1LP0408C-I: Features: • Single 5 V supply: 5 V ± 10%• Access time: 55/70 ns (max)• Power dissipation: Active: 10 mW/MHz (typ) Standby: 4 W (typ)• Completely static memory. No clock or ti...

R1LP0408C-I Data Sheet

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Part Number:
R1LP0408C-I
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Single 5 V supply: 5 V ± 10%
• Access time: 55/70 ns (max)
• Power dissipation: Active: 10 mW/MHz (typ) Standby: 4 W (typ)
• Completely static memory. No clock or timing strobe required
• Equal access and cycle times
• Common data input and output. Three state output
• Directly TTL compatible. All inputs and outputs
• Battery backup operation.
• Operating temperature: −40 to +85°C

 




Pinout

Connection Diagram


Specifications

Parameter Symbol Value Unit
Power supply voltage relative to VSS VCC −0.5 to +7.0 V
Terminal voltage on any pin relative to VSS VT −0.5*1 to VCC + 0.3*2 V
Power dissipation PT 0.7 W
Operating temperature Topr −20 to +70 °C
Storage temperature range Tstg −65 to +150 °C
Storage temperature range under bias Tbias −20 to +85 °C
Notes: 1. VT min: −3.0 V for pulse half-width 30 ns.
            2. Maximum voltage is +7.0 V.


Description

The R1LP0408C-I is a 4-Mbit static RAM organized 512-kword × 8-bit. R1LP0408C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The R1LP0408C-I Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It has packaged in 32-pin SOP, 32-pin TSOP II.




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