R1LV0408C-C

• Single 3 V supply: 2.7 V to 3.6 V
• Access time: 55/70 ns (max)
• Power dissipation:
   -Active: 6 mW/MHz (typ)
   -Standby: 2.4 W (typ)
• Completely static memory.
  - No clock or timing strobe required
• Equal access and cycle times
• Common data input and output.
  - Three state output
• Directly TTL compatible.
  - All inputs and outputs
• Battery backup operation.
• Operating temperature: −20 to +70°C

Notes: 1. V_T min: −3.0 V for pulse half-width 30 ns.
           2. Maximum voltage is +7.0 V.

The R1LV0408C-C is a 4-Mbit static RAM organized 512-kword × 8-bit. R1LV0408C-C Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The R1LV0408C-C Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It has packaged in 32-pin SOP, 32-pin TSOP II and 32-pin STSOP.