Features: • Single 2.7-3.6V power supply• Small stand-by current:2µA (3.0V, typ.)• Data retention supply voltage =2.0V• No clocks, No refresh• All inputs and outputs are TTL compatible• Easy memory expansion by CS1#, CS2, LB# and UB#• Common Data I/O...
R1LV1616R: Features: • Single 2.7-3.6V power supply• Small stand-by current:2µA (3.0V, typ.)• Data retention supply voltage =2.0V• No clocks, No refresh• All inputs and outp...
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Parameter | Symbol | Value | Unit | |
Power supply voltage relative to Vss | Vcc | -0.5 to +4.6 | V | |
Terminal voltage on any pin relation toVss | PT | -0.5*1 to Vcc+0.3*2 | V | |
Power dissipation | VT | 0.7 | W | |
Operation temperature | Topr | R ver. | 0 to +70 | °C |
W ver. | -20 to +85 | |||
I ver. | -40 to +85 | |||
Storage temperature | Tstg | -65 to +150 | °C | |
Storage temperature range under bias | Tbias | R ver. | 0 to +70 | °C |
W ver. | -20 to +85 | |||
I ver. | -40 to +85 |
The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
The R1LV1616R Series is suitable for memory applications where a simple interfacing , battery operating and battery backup are the important design objectives.
The R1LV1616R Series is packaged in a 52pin micro thin small outline mount device[µTSOP / 10.79mm x 10.49mm with the pin-pitch of 0.4mm] or a 48balls fine pitch ball grid array [f-BGA / 7.5mmx8.5mm with the ball-pitch of 0.75mm and 6x8 array] . It gives the best solution for a compaction of mounting area as well as flexibility of wiring pattern of printed circuit boards.