R1RP0404D

• Single 5.0 V supply: 5.0 V ± 10%
• Access time 12 ns (max)
• Completely static memory
 - No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
 - All inputs and outputs
• Operating current: 130 mA (max)
• TTL standby current: 40 mA (max)
• CMOS standby current : 5 mA (max)
                                       : 1.0 mA (max) (L-version)
• Data retention current: 0.5 mA (max) (L-version)
• Data retention voltage: 2.0 V (min) (L-version)
• Center V_CC and V_SS type pin out

Notes: 1. V_T (min) = −2.0 V for pulse width (under shoot) 6 ns.
2. V_T (max) = V_CC + 2.0 V for pulse width (over shoot) 6 ns.

The R1RP0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system. The R1RP0404D is packaged in 400-mil 32-pin SOJ for high density surface mounting.